The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 07, 1998
Filed:
Jul. 08, 1996
Sang-bo Lee, Kyungki-do, KR;
Dong-il Seo, Kyungki-do, KR;
Samsung Electronics Co., Ltd., Suwon, KR;
Abstract
A semiconductor memory device achieves high speed operation while operating at a low power supply voltage by boosting the voltage level at the plate node of a memory cell during an access operation. The memory device includes a plate voltage generator which generates a variable voltage level. The plate voltage generator includes a pair of switches for coupling the plate node to either a conventional (1/2)VCC voltage generator or a power supply node in response to a control signal. The plate voltage generator also includes a pulse generator that generates a pulse signal for controlling the switches in response to the control signal. During a precharge period, the bitline pair is charged to VCC. The plate voltage generator charges the plate node to (1/2)VCC during the precharge state and then to VCC during an access operation. This boosts the voltage level at the storage node of the memory cell, thereby decreasing the time required to amplify the signals on the bitlines.