The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 07, 1998

Filed:

Jun. 24, 1997
Applicant:
Inventors:

Yoshihisa Sugiura, Tokyo, JP;

Yoshihisa Iwata, Kanagawa-Ken, JP;

Keniti Imamiya, Kanagawa-Ken, JP;

Assignee:

Kabushiki Kaisha Toshiba, Kanagawa-Ken, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C / ;
U.S. Cl.
CPC ...
36518911 ; 365191 ; 365227 ;
Abstract

A potential transfer circuit consists of a first pad, a second pad, a voltage detection circuit, a level shift circuit and a switching MOS transistor. The voltage detection circuit is connected to the first pad and detects a high voltage applied to the first pad and generates a control signal which is supplied to the level shift circuit. The level shift circuit receives the control signal and generates a drive signal which is in turn supplied to the gate of the MOS transistor, causing the MOS transistor to supply to a circuit under test a test signal supplied through the second pad to the drain of the MOS transistor. In preferred embodiments, the power supply of the level shift circuit is derived from the high voltage signal supplied to the first pad.


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