The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 07, 1998

Filed:

Oct. 10, 1995
Applicant:
Inventors:

Paul R Berger, Newark, DE (US);

Wei Gao, Woburn, MA (US);

Assignee:

The University of Delaware, Newark, DE (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257749 ; 257448 ; 257457 ; 257 81 ; 257 82 ;
Abstract

An improved metal-semiconductor-metal (MSM) photodiode, specifically a new high responsivity AND high bandwidth photodetector, resulting in a high gain-bandwidth product is disclosed. The disclosed device is an MSM photodiode in which the anode and cathode are made of different materials of differing opacity and possibly including different electrode dimensions as well. Using an opaque anode and a transparent cathode reduces surface reflections off the opaque electrodes allowing more light to be absorbed within the active semiconductor region. However, it concurrently keeps the transit distance for the slower moving holes to a minimum. Thus, the long tail in the impulse response due to hole collection is minimized, resulting in increased bandwidth.


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