The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 07, 1998
Filed:
Jun. 03, 1996
Applicant:
Inventors:
Karlheinz Mueller, Waldkraiburg, DE;
Holger Poehle, Taufkirchen, DE;
Assignee:
Siemens Aktiengesellschaft, Munich, DE;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257557 ; 257591 ;
Abstract
A pnp-type bipolar transistor includes a highly dop p-conducting emitter zone, a base zone and a buried n-conducting zone below the emitter zone. An additional p-conducting region is connected to the highly doped emitter zone and is disposed between the highly doped emitter zone and the buried zone. A collector zone includes a highly doped collector connection zone and a p-conducting region reaching from the collector connection zone to the buried zone.