The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 07, 1998
Filed:
Mar. 17, 1997
Applicant:
Inventor:
Satwinder Malhi, Garland, TX (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257343 ; 257192 ;
Abstract
A power semiconductor device is shown to comprise a source region (24) and a drain region (26) disposed in a semiconductor substrate (10). A channel region (30) is disposed inwardly from a gate oxide layer (18) and a gate conductor (20). The device comprises a composite drift region (38) is formed of an n-type region (12) and a gallium arsenide region (36).