The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 07, 1998
Filed:
Nov. 21, 1997
Samuel Reele, Rochester, NY (US);
Eastman Kodak Company, Rochester, NY (US);
Abstract
A photodetector that incorporates at least two photosensitive regions (separated by at least one physical gap) of a first semiconductor type with the at least two photosensitive regions being supported on a substrate and acting as first terminals of the photodetector is improved by; adding a second semiconductor type into the physical gap(s) abutting the at least two photosensitive regions. The second semiconductor region(s) form a barrier to the out diffusion between the at least two photosensitive regions of the first semiconductor type. Additionally, the second semiconductor type region acts as a second photodetector terminal. This improved geometry results in faster rise and fall times of the photodetector's output current by decreasing the 3-D spaces within the gap(s) between the at least two photosensitive regions which were not subjected to the presence of an E-field when unimproved photodetectors were biased into operation.