The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 07, 1998
Filed:
Jan. 16, 1996
Victor Albert Temple, Clifton Park, NY (US);
Harris Corporation, Palm Bay, FL (US);
Abstract
One embodiment of a metal oxide semiconductor controlled thyristor in accordance with the present invention has a semiconductor wafer with opposing first and second surfaces. The wafer includes first through sixth sequential regions which are disposed one above the other. The first region includes the second surface of the wafer and each of the second through sixth regions has at least a portion which extends up to the first surface. The first, third, and sixth regions have a first type of conductivity and the second, fourth, and fifth regions have a second type of conductivity. A trench with a bottom and sidewalls extends from the first surface and passes through the fourth, fifth, and sixth regions and into the third region. A dielectric material coats the bottom and sidewalls of the trench and a conductive material fills the remainder of the trench. In an alternative embodiment: the third through sixth regions have at least a portion which extends up to the first surface; the first, fourth, and sixth regions have a first type of conductivity; the second, third, and fifth regions have a second type of conductivity; and the trench extends from the first surface and passes through the fifth and sixth regions and into the fourth region.