The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 07, 1998

Filed:

Oct. 09, 1997
Applicant:
Inventors:

Hirofumi Sumi, Kanagawa, JP;

Keiichi Maeda, Kanagawa, JP;

Yukiyasu Sugano, Kanagawa, JP;

Kazuhide Koyama, Kanagawa, JP;

Mitsuru Taguchi, Tokyo, JP;

Kazuhiro Hoshino, Kanagawa, JP;

Assignee:

Sony Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438643 ; 438648 ; 438653 ; 438655 ;
Abstract

The present invention provides a process for fabricating a connection structure comprising a anti-reaction layer having excellent barrier properties and having improved ohmic characteristics with respect to the semiconductor substrate. Accordingly, the present invention comprises forming a first anti-reaction layer by temporarily ceasing the film deposition, and then initiating the film deposition again to form a second anti-reaction layer on the surface of the previously deposited first anti-reaction layer. A heat treatment can be applied to the structure after depositing a anti-reaction layer.


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