The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 07, 1998
Filed:
Jan. 23, 1997
Applicant:
Inventors:
Kunihiro Fujii, Tokyo, JP;
Hiroshi Ito, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438586 ; 438592 ; 438655 ; 438656 ; 438664 ; 438755 ;
Abstract
In a method for producing a semiconductor device disclosed herein, a titanium film (131) is formed on a silicon layer and a titanium disilicide film (134) of a C49 structure is formed by the first rapid thermal annealing, followed by removing a titanium nitride film (132). The titanium disilicide film (134) thus formed is then subjected to phase transition to form titanium disilicide film (135a) of a C54 structure, and the titanium-excess titanium silicide film (133) is selectively removed by the second wet etching.