The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 30, 1998
Filed:
Jul. 03, 1995
Applicant:
Inventors:
Jonathan L Shaw, Springfield, VA (US);
Kevin Jensen, Kensington, MD (US);
Henry F Gray, Alexandria, VA (US);
Assignee:
The United States of America as represented by the Secretary of the Navy, Washington, DC (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
313309 ; 313351 ; 313336 ; 313366 ; 357 55 ; 357 68 ;
Abstract
A field emitter is disclosed comprising a graded electron affinity surface ayer. The graded electron affinity layer provides for increased transconductance, reduced energy distribution of emitted electrons, reduced noise and increased uniformity in its operation.
Shaw, Jonathan. (1998). Graded electron affinity semiconductor field emitter (U.S. Patent No. 5773920). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5773920
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile