The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 30, 1998
Filed:
Aug. 22, 1996
Junji Saito, Yamanashi, JP;
Fujitsu Ltd., Kanagawa, JP;
Fujitsu Quantum Devices Ltd., Yamanashi, JP;
Abstract
On a compound semiconductor substrate on which a compound semiconductor device is formed, a film having a multilayer structure formed by alternately depositing a multi-element compound semiconductor layer and a GaAs layer containing arsenic excessively deviating from a stoichiometric ratio repeatedly and an active layer deposited on said film having a multilayer structure are formed. When the thickness of the GaAs layer is made to a critical film thickness or less, even if the GaAs layer and the multi-element compound semiconductor layer have different lattice constants, the strain of lattice mismatch is confined in the vicinity of the interface, and a high resistance is achieved while maintaining a crystal of high quality as it is.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile