The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 30, 1998
Filed:
Aug. 02, 1996
Shinichi Kawamura, Yokohama, JP;
Kaichi Fukuda, Yokohama, JP;
Takeshi Kashiro, Kawasaki, JP;
Shigetaka Toriyama, Yokohama, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
A thin film transistor includes an amorphous silicon layer formed on a substrate, a gate insulator formed on the amorphous silicon layer, a gate electrode formed on the gate insulator, source and drain contact regions of polycrystalline silicon formed in the amorphous silicon layer on both sides of the gate electrode, and source and drain electrodes formed respectively in contact with the source and drain contact regions. Particularly, the gate insulator includes a first insulating film which covers the amorphous silicon layer as a reflectivity reducing film for reducing the optical reflectivity of the amorphous silicon layer and the source and drain contact regions are formed by an annealing process for applying a laser beam to the amorphous silicon layer via the first insulating film.