The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 30, 1998
Filed:
Apr. 30, 1996
Applicant:
Inventors:
Evelyn Lynn Hu, Goleta, CA (US);
Milan Singh Minsky, Goleta, CA (US);
Assignee:
The Regents of the University of California, Oakland, CA (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438746 ; 205655 ; 205666 ;
Abstract
A method of processing semiconductor films and layers, especially Group III Nitride films, has been achieved, using laser-enhanced, room-temperature wet etching with dilute etchants. Etch rates of a few hundred .ANG./min up to a few thousand .ANG./min have been achieved for unintentionally doped n-type Group III Nitride films grown by MOCVD on a sapphire substrate. The etching is thought to take place photoelectrochemically with holes and electrons generated by incident illumination from 4.5 mW of HeCd laser power enhancing the oxidation and reduction reactions in an electrochemical cell.