The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 30, 1998
Filed:
Nov. 29, 1995
Electronics and Telecommunications Research Institute, Daejeon, JP;
Abstract
A semiconductor substrate and a method of fabricating the same, and provides which the active area to be formed the active element is defined by the trench filled with any conductive polycrystal silicon in which any portion of a large number of the epitaxial layer is crystally grown on any conductive silicon substrate, and the multi-aperture silicon oxide layer is formed from the metal line to be used to the passive element or the transmitting line outside the trench, so that the interference between the passive element and the semiconductor substrate is prevented, and to attenuate the transmitting signal prevents to be attenuated in the high frequency band operation. Therefore, the semiconductor substrate for a unit active element and the MMIC to be able to operate the high frequency band is manufactured into the silicon, and thus it is advantageous to reduce the cost and enhance the yield. Silicon oxide layer is formed from the metal line to be used to the passive element or the transmitting line outside the trench, so that the interference between the passive element and the semiconductor substrate is prevented, and to attenuate the transmitting signal prevents to be attenuated in the high frequency band operation. Therefore, the semiconductor substrate for a unit active element and the MMIC to be able to operate the high frequency band is manufactured into the silicon, and thus it is advantageous to reduce the cost and enhance the yield.