The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 23, 1998
Filed:
Nov. 10, 1997
Yuichi Egawa, Tokyo, JP;
Nippon Steel Corporation, Tokyo, JP;
Abstract
A high density semiconductor memory device includes: a semiconductor substrate; and a plurality of memory cell groups formed on the semiconductor substrate, each of the memory cell groups including a plurality of memory cells having one common source/drain region, wherein when a surface of the semiconductor substrate is divided into a plurality of areas which are arranged in a matrix of rows extending in a first direction and columns extending in a second direction intersecting the first direction, the memory cell groups are selectively arranged in the areas such that the memory cell groups are located in every other one of the areas arranged in each of the rows and also in every other one of the areas arranged in each of the columns.