The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 23, 1998
Filed:
Nov. 08, 1995
David Michael Gill, Pasadena, MD (US);
Parvez Nasir Uppal, Laurel, MD (US);
Martin Marietta Corporation, Bethesda, MD (US);
Abstract
Semiconductor devices made in highindium-content semiconductor material have advantageous properties, but similar substrate materials are hard to handle. A buffer layer makes a lattice-constant transition between a GaAs substrate and a high-indium epitaxially deposited semiconductor such as those lattice-matched to InP. The buffer layer is an epitaxial layer including atoms of two Group III elements, and atoms of two Group V elements, with the ratio of the atoms of at least one group varied along the depth of the buffer layer, in a manner which makes a transition of the lattice constant between that of the substrate and the high-Indium semiconductor material. The Group III elements are gallium and aluminum, and the Group V elements are arsenic and antimony.