The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 23, 1998
Filed:
May. 02, 1995
Kazuhiro Okaniwa, Itami, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A semiconductor device includes a heat generating element disposed on a front surface of a semiconductor substrate and a cavity disposed within the semiconductor substrate opposite the heat generating element. In this structure, heat generated by the heat generating element is conducted through the substrate to the cavity, whereby the thermal conductivity of the device is improved. In a method for producing the semiconductor device, portions of the substrate at opposite sides of the heat generating element are selectively etched in a direction perpendicular to the front surface to form first holes (first etching process). Thereafter, the substrate is selectively etched from the front surface to form second holes beneath the respective first holes (second etching process). During the second etching process, the second holes are connected to each other, resulting in the cavity for heat radiation.