The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 23, 1998
Filed:
Mar. 18, 1996
Applicant:
Inventors:
Toyoji Yamamoto, Tokyo, JP;
Kiyoshi Takeuchi, Tokyo, JP;
Assignee:
NEC Corporation, , JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
430232 ; 438592 ;
Abstract
Using a lamination of a tungsten silicide layer and a non-doped polysilicon layer as a mask, a dopant impurity is ion implanted into a semiconductor substrate so as to form impurity regions and dope the tungsten silicide layer with the dopant impurity, and the dopant impurity is diffused from the tungsten silicide layer into the non-doped polysilicon layer during the activation of the dopant impurity introduced into the substrate, thereby making the process simple.