The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 23, 1998
Filed:
Nov. 08, 1996
Applicant:
Inventor:
Tomoharu Mametani, Tokyo, JP;
Assignee:
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438199 ; 438302 ;
Abstract
In a manufacturing process of a MOS FET having a C-MOS structure, lightly doped n- diffused layer is formed for source/drain regions in n channel and p channel transistor regions respectively. A p+ diffused layer is further formed for source/drain regions in a p channel transistor region. By a heating process, the n- layer is outweighed by diffusion of p type impurities in the p channel transistor region, and the source/drain current of the p channel MOS FET is secured.