The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 23, 1998
Filed:
Mar. 16, 1994
Yoichi Araki, Yamanashi-Ken, JP;
Koichiro Inazawa, Tokyo-To, JP;
Sachiko Furuya, Tokyo-To, JP;
Masahiro Ogasawara, Tokyo-To, JP;
Chishio Koshimizu, Yamanashi-Ken, JP;
Tiejun Song, Kanagawa-Ken, JP;
Tokyo Electron Kabushiki Kaisha, Tokyo, JP;
Abstract
In order to etch an object to be processed, such as a semiconductor wafer, the object to be processed is placed in a vacuum processing chamber, an etching gas is introduced into the vacuum processing chamber, and electrical power is applied to a pair of electrodes within the vacuum processing chamber by a high-frequency electrical power source. A mixed gas of carbon monoxide and a gas which does not contain hydrogen and which contains at least one element from the group IV elements and at least one element from group VII elements is used as the etching gas. A halogenated carbon gas, typically a fluorocarbon such as C.sub.4 F.sub.8, is used as the gas containing elements from the group IV and group VII elements. The concentration of carbon monoxide in the etching gas could be 50% or more. At least approximately 86% of an inert gas, such as argon, xenon, krypton, or N.sub.2 and O.sub.2 could be added to the etching gas. Use of the above etching gas enables a high etching selectivity and prevents the formation of fences.