The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 16, 1998
Filed:
Oct. 25, 1996
Yueh Yale Ma, Los Altos Hills, CA (US);
Other;
Abstract
A high density single-poly metal-gate non-volatile memory cell uses a layer of tunnel oxide formed over a silicon substrate. A floating gate is formed over the tunnel oxide. Source and drain regions are ion implanted in the silicon substrate such that the source and drain regions are self-aligned to the corresponding edges of the floating gate. Following a high temperature anneal cycle which removes the defects in the source and drain regions, a composite layer of ONOP (Oxide-Nitride-Oxide-Polysilicon) coupling dielectric is formed over the floating gate. A metal, typically an aluminum alloy, forms the control gate of the memory cell on top of the composite layer of ONOP coupling dielectric.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile