The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 16, 1998
Filed:
May. 09, 1995
Chenming Hu, Alamo, CA (US);
Reza Moazzami, Oakland, CA (US);
The Regents of the University of California, Oakland, CA (US);
Abstract
A dynamic random access memory cell is described which can operate either in volatile or nonvolatile mode. When operating in a volatile mode, the memory cell operates in the same manner as a conventional dynamic random access memory cell, that is, with charge being stored and discharged from a capacitor in the memory cell. Upon receipt of a suitable signal, however, the cell can be switched to a nonvolatile mode of operation. In this mode of operation, a pulse applied to the capacitor can place a ferroelectric film in the desired polarization state to represent the binary data. The ferroelectric film will hold its polarization state until the data is recalled and the cell reverts to operating in a volatile mode.