The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 16, 1998
Filed:
Mar. 07, 1996
Applicant:
Inventors:
Junichi Sakano, Hitachi, JP;
Hideo Kobayashi, Hitachi, JP;
Masahiro Nagasu, Hitachinaka, JP;
Mutsuhiro Mori, Mito, JP;
Assignee:
Hitachi, Ltd., Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257401 ; 257140 ; 257368 ; 257168 ;
Abstract
A compound semiconductor device including a MISFET and a thyristor connected in series wherein either the withstanding voltage between the MISFET p base layer and the thyristor p base layer is set lower than the withstanding voltage of the MISFET, the MISFET is turned off under a condition that the MISFET p base layer and the thyristor p base layer are connected via a p channel or the lateral resistance of the thyristor p base layer is reduced, thereby the safe operating region of the compound semiconductor device is extended.