The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 16, 1998

Filed:

Jul. 03, 1996
Applicant:
Inventors:

Wei Chen, Croton-on-Hudson, NY (US);

Devendra Kumar Sadana, Pleasantville, NY (US);

Yuan Taur, Bedford, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257347 ; 257351 ;
Abstract

An integrated circuit is described incorporating a substrate, a layer of insulator, a layer of silicon having raised mesas and thin regions therebetween to provide ohmic conduction between mesas, electronic devices on the mesas, and interconnection wiring. The invention overcomes the problem of a floating gate due to charge accumulation below the channel of MOS FET's.

Published as:

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