The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 16, 1998
Filed:
Aug. 06, 1996
Applicant:
Inventor:
Osamu Hanagasaki, Hamamatsu, JP;
Assignee:
Yamaha Corporation, Shizuoka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257295 ; 257296 ; 257300 ; 257305 ; 257307 ;
Abstract
A method of manufacturing a semiconductor storage device having a plurality of memory cells each having one transistor and one ferroelectric capacitor includes the steps of: forming a transistor; forming a plate line; sequentially laminating three layers including a first conductive film, a ferroelectric layer, and a second conductive layer stacked in this order; and sequentially etching the three layers by using a single etching mask. It is possible to maintain the contact surface between the electrodes and ferroelectric layer of a ferroelectric capacitor clean and the characteristics of the ferroelectric capacitor of the semiconductor storage device can be improved.