The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 16, 1998
Filed:
Oct. 18, 1996
Applicant:
Inventors:
Herbert Goebel, Reutlingen, DE;
Vesna Goebel, Reutlingen, DE;
Assignee:
Robert Bosch GmbH, Stuttgart, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437151 ; 148D / ; 437228 ; 437904 ;
Abstract
In a semiconductor arrangement and a method for manufacturing a semiconductor arrangement, varying diffusion rates are attained by introducing crystal disorder structures into a silicon crystal. The semiconductor structure includes a semiconductor wafer which has a first layer and a second layer, which form a p-n junction. Because the diffusion rates vary, the gradient of the dopant concentration of the second layer in the edge area is greater (merely) than in the middle area. As a result, a breakdown of the p-n junction in the edge area is reached at higher voltages than in the middle area.