The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 16, 1998
Filed:
Sep. 13, 1996
Applicant:
Inventors:
Jun Seok Lee, Seoul, KR;
Oh Seok Han, Seoul, KR;
Assignee:
LG Semicon Co., Ltd., Chungcheongbuk-Do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F / ;
U.S. Cl.
CPC ...
430-5 ; 430322 ;
Abstract
Methods of fabricating phase shift masks, which facilitate easy adjustment of the light transmissivity of a field region and the thickness of a phase shift mask, to thereby simplify the production process, and increase its reliability and performance. Embodiments may include the steps of providing a transparent substrate, forming a conductive light shielding layer on the transparent substrate, implanting oxygen ions into the conductive light shielding layer to form a semitransparent film, and selectively etching the semitransparent film to form a phase shift film.