The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 16, 1998

Filed:

Feb. 14, 1997
Applicant:
Inventors:

Fujian Huang, Pittsburgh, PA (US);

James Giusti, Chanhassen, MN (US);

Gregory S Mowry, Burnsville, MN (US);

Assignee:

Seagate Technology, Inc., Scotts Valley, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11B / ;
U.S. Cl.
CPC ...
428692 ; 428611 ; 428667 ; 428678 ; 4286 / ; 4286 / ; 4286 / ; 4286 / ; 4286 / ; 428900 ; 360113 ; 324252 ;
Abstract

The present invention includes a magnetoresistive type sensor having a first sensor layer of NiFe and a first layer of antiferromagnetic material, preferably NiMn. Portions of the first NiFe layer are deposited directly on top of the first layer of antiferromagnetic material such that the portions of the first NiFe sensor layer are in contact with the first layer of antiferromagnetic material. The first layer of antiferromagnetic material exchange couples with the first NiFe sensor layer to thereby provide domain stabilization of the first NiFe sensor layer. The first layer of antiferromagnetic material is deposited directly on top of a first baselayer of molybdenum to enhance the exchange coupling between the first NiFe sensor layer and the first antiferromagnetic layer.


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