The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 16, 1998
Filed:
Feb. 24, 1997
Komatsu Electronic Metals Co., Ltd., Hiratsuka, JP;
Abstract
An apparatus for fabricating a semiconductor single crystal, which make it possible to reduce the oxygen concentration of a pulling single crystal, to steadily dissolve the polysilicon material received in a crucible, and to minimize the cost and installation space, is provided. The hollow cylindrical resistance heater of the apparatus, which co-axially surrounds a crucible, is provided with a ring-shaped slit excluding the location where at least two electrodes are formed, in a direction substantially perpendicular to the axial direction so as to divide the heater into an upper heating portion and a lower heating portion, and is provided with a plurality of vertical slits formed on the upper heating portion and the lower heating portion respectively, in a direction substantially parallel to the axial direction, wherein each vertical slit formed on the upper heating portion does not align with each vertical slit formed on the lower heating portion. The vertical slits formed on the upper heating portion and the slits formed on the lower heating portion have different pitches. The thickness or length of the upper heating portion is different from that of the lower heating portion.