The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 09, 1998

Filed:

Dec. 24, 1996
Applicant:
Inventors:

Natale Aiello, Catania, IT;

Vito Graziano, Palermo, IT;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
257547 ; 257500 ;
Abstract

The present invention relates to an electronic device integrated monolithlly on a semiconductor material comprising a substrate having a first conductivity type in which are formed first and second diffusion regions of a second conductivity type. The substrate and the first and second diffusion regions defining a base region, a collector region and an emitter region of a parasitic transistor. The second diffusion region includes a third diffusion region having conductivity of the first type to provide in the second diffusion region a resistive path placed in series with the emitter region of the parasitic transistor while backfeeding it negatively and taking it to saturation with a resulting reduction of its current gain and limitation of the maximum current due thereto.


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