The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 09, 1998
Filed:
Jan. 03, 1997
Applicant:
Inventor:
Julian Darryn White, Cambridge, GB;
Assignee:
Hitachi, Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01J / ;
U.S. Cl.
CPC ...
257528 ; 257 30 ; 257734 ; 2504922 ; 2504923 ;
Abstract
A method of forming a nano-scale device with a probe such as a STM on a substrate includes the step of rendering the relevant part of the substrate conductive whilst the device is being formed with the probe so that current can flow from the probe to the substrate. Thereafter, to operate the device, the substrate is rendered non-conductive so as to prevent dissipation of current from the device through the substrate. The substrate can be altered in conductivity by cooling to undergo a Mott transition, can be heated from a normally non-conductive condition to become conductive, or subject to laser radiation to induce charge carriers to render it conductive.