The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 09, 1998
Filed:
May. 14, 1996
Applicant:
Inventors:
Assignee:
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
257371 ; 257372 ; 257395 ; 257655 ;
Abstract
An n well and a p well are formed in a silicon substrate. The n well has n type impurity concentration peaks and a p type impurity concentration peak. The p well has p type concentration peaks. The impurity concentration peaks serving as channel stopper regions for isolating elements exist only in proximity to the lower surface of an isolation oxide film but not in element regions.
Okumura, Yoshinori. (1998). Semiconductor device including retrograde well structure with suppressed (U.S. Patent No. 5763921). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5763921
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile