The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 09, 1998
Filed:
Feb. 05, 1997
Applicant:
Inventors:
Sa Kyun Rha, Seoul, KR;
Young Il Cheon, Seoul, KR;
Assignee:
LG Semicon Co., Ltd., Chungcheongbuk-Do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438149 ; 438151 ; 438159 ; 438163 ; 438164 ;
Abstract
A method for fabricating Thin Film Transistors includes the steps of forming a gate electrode on a substrate, forming a gate insulation film and a semiconductor layer successively on the substrate, forming a sidewall spacer only at one sidewall of the gate electrode on the semiconductor layer, and forming impurity regions in the semiconductor layer on both sidewalls of the gate electrode by ion-injecting impurity ions into the semiconductor layer.