The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 09, 1998
Filed:
Oct. 28, 1996
Tihiro Ohkawa, La Jolla, CA (US);
Toyo Technologies Inc., La Jolla, CA (US);
Abstract
A method for manufacturing a micro-bubble textured material includes performing simultaneous implantation of inert gas atoms and plasma assisted chemical vapor deposition. Plasma that contains ions of an inert gas and neutrals necessary for PCVD is produced over a substrate. The substrate being deposited with the material to be textured is then biased with a negative voltage to accelerate the ions from the plasma. Control over the bias voltage determines the penetration depth into the materials and control over the ion current to the substrate determines the fractional atomic density of the implanted gas atoms and the penetration depth. Simultaneous deposition causes the location of the layer of the implanted atoms to move at the deposition rate, resulting in a uniform implantation of the atoms. A first heating of the substrate enhances the diffusion of the implanted gas atoms to form aggregates and second heating reduces the yield strength of the material and causes the aggregates to expand and to thereby create uniformly distributed micro bubbles in the material.