The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 09, 1998
Filed:
Mar. 13, 1996
Applicant:
Inventors:
Makoto Takiyama, Tokyo, JP;
Hideki Fujikake, Tokyo, JP;
Assignee:
Nippon Steel Corporation, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
B44C / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
216 67 ; 216 58 ; 216 72 ; 216 76 ; 437228 ; 437225 ; 437248 ; 437974 ;
Abstract
By using first mixed gas containing carbon atoms and fluorine atoms, a semiconductor substrate is etched. In order to remove a damage layer formed on the surface of the semiconductor substrate by this etching processing, the semiconductor substrate is etched by second mixed gas including gas containing fluorine atoms and oxygen gas having a partial pressure ratio of at least 70%. Thereafter, a semiconductor oxide film is formed on the semiconductor substrate to fabricate a semiconductor device.