The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 02, 1998
Filed:
Feb. 07, 1997
Applicant:
Inventors:
Min-hwa Chi, Palo Alto, CA (US);
Chih Sieh Teng, San Jose, CA (US);
Albert Bergemont, Palo Alto, CA (US);
Assignee:
National Semiconductor Corporation, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C / ;
U.S. Cl.
CPC ...
36518527 ; 36518501 ; 36518514 ; 257314 ;
Abstract
The layout and the programming voltage of a single-poly EPROM cell are reduced by eliminating the n+ contact region which is conventionally utilized to place a positive voltage on the n-well of the cell, and by utilizing a negative voltage to program the cell. The negative voltage is applied to a p+ contact region formed in the n-well which injects electrons directly onto the floating gate of the cell.
Chi, Min-hwa. (1998). Single-poly eprom cell that utilizes a reduced programming voltage to (U.S. Patent No. 5761126). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5761126
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile