The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 02, 1998
Filed:
Jun. 13, 1996
Myung-jae Kim, Kyungki-do, KR;
Tae-sung Jung, Kyungki-do, KR;
Samsung Electronics, Co., Ltd., Kyungki-do, KR;
Abstract
A sense amplifier circuit for a nonvolatile semiconductor memory device, with NAND structured cells, includes a bit line isolation section located between a pair of bit lines connected to a memory cell array and a pair of sub-bit lines connected to an input/output gate circuit, a latch type voltage-controlled current source having n-channel MOS transistors connected to the sub-bit lines, and a switching section connected between the voltage-controlled current source and a signal line. The bit lines are electrically isolated from the sub-bit lines by provision of a bit line isolation section receiving an isolation control signal during the sensing operation. The sense amplifier circuit sensing operation is not affected by bit line load impedance and, accordingly, the sensing speed is improved and peak current is reduced.