The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 02, 1998
Filed:
Mar. 20, 1996
Kenji Nishi, Tokyo, JP;
Oki Electric Industry Co., Ltd., Tokyo, JP;
Abstract
An object of the present invention is to micronize (i.e., reduce the size of) a MOS semiconductor device without reducing the operating speed of the device. An active region for the formation of a transistor has edges defined as the boundaries between the active region and a device separation region. The distance from one edge of the active region, which extends in the direction parallel to a gate width of the transistor, to the other edge decreases as the distance from a gate electrode along the direction of a gate length, which intersects the direction of the gate width increases. Thus, the size of the MOS semiconductor device can be decreased without impairing its speedup.