The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 02, 1998
Filed:
May. 31, 1996
O Glenn Ramer, Los Angeles, CA (US);
Robin W Rosser, Los Angeles, CA (US);
Hughes Electronics, Los Angeles, CA (US);
Abstract
A layer of sacrificial, chemically reactive material is formed as part of the fabrication process of an integrated circuit, and covers active circuitry to protect it from reaction with hydrogen. Integrated circuits and fabrication methods are provided by the present invention. The present invention is used to fabricate integrated circuits such as ferroelectric memories, and the like, using die or substrates containing one or more sacrificial layers of strontium bismuth niobate tantalate, for example. The sacrificial layers consume atmospheric hydrogen or other materials that otherwise would react with active circuitry of the integrated circuits and render them ineffective.