The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 02, 1998
Filed:
Nov. 15, 1996
Stuart Mcallister Burns, Jr, Ridgefield, CT (US);
Hussein Ibrahim Hanafi, Goldens Bridge, NY (US);
Waldemar Walter Kocon, Wappingers Falls, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Method for creating a doped polysilicon layer of accurate shape on a sidewall of a semiconductor structure. According to the present method, a doped polysilicon film covering at least part of said semiconductor structure and of said sidewall is formed. This polysilicon film then undergoes a reactive ion etching (RIE) process providing for a high etch rate of said polysilicon film to approximately define the shape of the polysilicon layer on said sidewall. Then, said polysilicon film undergoes a second reactive ion etching process. This second reactive ion etching process is a low polysilicon etch rate process such that non-uniformities of the surface of said polysilicon film are removed by sputtering.