The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 02, 1998
Filed:
Oct. 17, 1996
Applicant:
Inventors:
Herbert Goebel, Reutlingen, DE;
Vesna Goebel, Reutlingen, DE;
Assignee:
Robert Bosch GmbH, Stuttgart, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438558 ; 438458 ; 438465 ;
Abstract
A method for manufacturing a silicon wafer, in which a diffusion process takes place. During the diffusion process, a dopant foil is applied to one side, and a neutral foil to the other side. The silicon wafers are cut out by means of wire sawing out of a silicon monocrystal, since they then exhibit an optimal surface roughness for the subsequent diffusion process.