The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 02, 1998
Filed:
Mar. 21, 1997
Fariborz Assaderaghi, Putnam County, NY (US);
Louis L Hsu, Dutchess County, NY (US);
Jack A Mandelman, Dutchess County, NY (US);
William R Tonti, Chitten County, VT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Large capacitance, low-impedance decoupling capacitors in SOI and their method of fabrication. A high conductivity trench substrate contact is made adjacent to the capacitor by removal of insulator lining the capacitor by use of an extra mask thereby making a substrate contact when the trench is filled with doped polysilicon. The inventive process is compatible with and easily integrated into existing SOI logic technologies. The SOI decoupling capacitors are formed in trenches which pass through the silicon and buried oxide layers and into the underlying silicon substrate.