The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 02, 1998
Filed:
Dec. 20, 1996
Applicant:
Inventor:
Masato Sakao, Tokyo, JP;
Assignee:
NEC Corporation, , JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438241 ; 438649 ;
Abstract
In a method for manufacturing a semiconductor device incorporating a DRAM section and a logic circuit section, a refractory metal layer is formed to cover a bit line of the DRAM section, and a gate electrode and impurity diffusion regions of the logic circuit section. Then, a heating operation is performed upon sadi refractory metal layer, so that metal silicide layers are formed in the bit line of the DRAM section, and the gate electrode and the impurity diffusion regions of the logic circuit section.