The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 02, 1998
Filed:
Oct. 16, 1996
Dah-Bin Kao, Palo Alto, CA (US);
John Pierce, Palo Alto, CA (US);
National Semiconductor Corporation, Santa Clara, CA (US);
Abstract
A method of fabricating external contacts in an integrated circuit structure utilizes chemical mechanical polishing (CMP). The structure includes an active device substrate region defined by field oxides. First and second diffusions formed in the active region define a substrate surface region therebetween. In accordance with the method, a layer of amorphous or polycrystalline silicon is formed in contact with the diffusion regions, subjected to a chemical mechanical polishing (CMP) step and then etched to form external contacts. The process flow can be applied to CMOS technologies and adapted to bipolar technologies to provide a BiCMOS flow.