The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 02, 1998

Filed:

Aug. 28, 1995
Applicant:
Inventors:

Weijie Yun, San Jose, CA (US);

Liwei Lin, Kao-Hsiung, TW;

Tariq M Haniff, San Mateo, CA (US);

Assignee:

BEI Electronics, Inc., Sylmar, CA (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
437228 ; 437203 ; 437901 ; 437921 ; 437927 ;
Abstract

Methods for surface micro-machining silicon wafers, including coating cavity sidewalls with oxidation-resistant material to prevent lateral oxidation. This in turn prevents 'bird's beak' during formation of a diaphragm. The methods are useful for, among other things, the manufacture of absolute-type pressure sensors. Along with bulk micro-machining techniques, the methods can be used to produce gauge- and differential-type pressure sensors, as well.


Find Patent Forward Citations

Yun, Weijie. (1998). Method of making a surface micro-machined silicon pressure sensor (U.S. Patent No. 5759870). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5759870

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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