The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 02, 1998

Filed:

Jun. 07, 1995
Applicant:
Inventors:

Fusen E Chen, Dallas, TX (US);

Frank Randolph Bryant, Denton, TX (US);

Girish Anant Dixit, Dallas, TX (US);

Assignee:

SGS-Thomson Microelectronics, Inc., Carrollton, TX (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437195 ; 437228 ; 437240 ; 437947 ; 437982 ;
Abstract

A method for forming sloped contact corners of an integrated circuit, and an integrated circuit formed according to the same, is disclosed. A first oxide layer is formed over the integrated circuit. An insulating layer is formed over the oxide layer. The oxide and insulating layers are then patterned and etched to form a contact opening to expose a conductive region underlying a portion of the oxide layer. A second oxide layer is formed in the bottom of the contact opening. The insulating layer is then reflowed to form rounded contact corners after which the second oxide layer is removed.


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