The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 02, 1998
Filed:
Dec. 05, 1995
Russell E Hollingsworth, Denver, CO (US);
Materials Research Group, Inc., Wheat Ridge, CO (US);
Abstract
A method of using amorphous silicon as a photoresist is disclosed herein. The photoresist is produced by first forming a thin film including at least an outermost layer which includes hydrogenated amorphous silicon onto a suitable surface. Predetermined areas of the outermost layer are then exposed to ultraviolet light. Following exposure, the unexposed areas of the outermost layer, along with any underlying associated portions of the film, are removed so as to reveal the surface in areas which underlie the unexposed outermost layer areas. In a first feature, the outermost layer is formed at a temperature no greater than about 100.degree. C. In a second feature, the predetermined areas of the outermost layer are exposed to ultraviolet light at a temperature no greater than about 100.degree. C. In a third feature, the film is formed entirely from hydrogenated amorphous silicon. In a fourth feature, the film is formed by first applying an amorphous silicon layer to the surface and, thereafter, hydrogenating the amorphous silicon layer to form the outermost layer.