The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 26, 1998

Filed:

Oct. 16, 1996
Applicant:
Inventors:

Sui F Lim, Sacramento, CA (US);

Connie J Chang-Hasnain, Palo Alto, CA (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01S / ;
U.S. Cl.
CPC ...
372 50 ; 372 43 ; 372 44 ; 372 45 ; 372 46 ; 372 98 ; 372 99 ;
Abstract

A vertical-cavity surface emitting laser is constructed with an intracavity quantum well photodetector. The quantum well photodetector is placed at an optical intensity peak at the Fabry-Perot wavelength. The device may include a current confinement layer in the form of an oxidation layer, an air gap, or proton implantation. The device may be formed with a semi-insulating substrate, a p+ doped substrate, or an n+ doped substrate. Embodiments of the invention include an air bridge contact, a ridge waveguide structure, and buried heterostructure layers.


Find Patent Forward Citations

Lim, Sui. (1998). Intracavity quantum well photodetector integrated within a (U.S. Patent No. 5757837). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5757837

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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