The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 26, 1998
Filed:
Jul. 23, 1996
Toshitsugu Sawai, Nara, JP;
Toshiro Akino, Osaka, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
A drain-source interconnection of a MOS transistor is represented by a parallel circuit formed of an electric current source and a resistor. The current of the electric current source, i, is represented by a polynomial of a difference (V.sub.GS -V.sub.T) where V.sub.GS is the gate-source voltage and V.sub.T is the threshold voltage. The operation area of the MOS transistor is divided into a plurality of sub-operation areas according to the gate-source and drain-source voltages. Respective coefficients of the polynomial and respective conductance of the resistor element are stored for the sub-operation areas. A MOS transistor model is prepared so that V.sub.T is represented by a polynomial of V.sub.BS, the substrate-source voltage of the MOS transistor. A circuit equation for a MOS transistor-containing semiconductor circuit is derived from the MOS transistor model. The circuit equation is analyzed.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile