The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 26, 1998
Filed:
Sep. 06, 1996
Masahi Agata, Osaka, JP;
Toshio Yamada, Shiga, JP;
Matsushita Electronics Corporation, Osaka, JP;
Abstract
A first p-type transmission MOS transistor with a gate connected to one of complementary input signal lines, a source connected to a first power supply and a drain connected to one of complementary output signal lines, is provided. A second p-type transmission MOS transistor with a gate connected to the other of the complementary input signal lines, a source connected to the first power supply and a drain connected to the other of the complementary output signal lines, is provided. A first capacitive element is connected between the gate and substrate of the first transmission MOS transistor. A second capacitive element is connected between the gate and substrate of the second transmission MOS transistor. At the time when signals are transmitted, the substrate voltage of the transmission MOS transistor is changed statically in synchronization with the input signal. As a result of such arrangement, the threshold voltage of the transmission MOS transistors can be regulated to be high in the standby state and can be regulated to be low in the active state. Therefore, the control of leakage current becomes possible in the standby state and the drain current increases in the active state thereby providing a high signal transmission rate.